Fundraising September 15, 2024 – October 1, 2024
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1
Advanced Ta-Based Diffusion Barriers for Cu Interconnects
Rene Hubner
diffusion
barrier
layer
sio2
barriers
formation
annealing
films
sample
silicon
amorphous
layers
thermal
figure
phys
atoms
deposited
appl
grain
temperature
stability
ta56si19n25
deposition
tasi2
hübner
surface
crystallization
substrate
microstructure
cu3si
oxide
solid
rené
ta73si27
metallization
leads
materials
observed
temperatures
diffraction
reaction
ta2n
thickness
dielectric
characterized
detected
xrd
soc
angle
depth
Language:
english
File:
PDF, 1.69 MB
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