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The Art of Analog Layout 3ed 2023
Hastings A.
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The Art of Analog Layout
Alan Hastings
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The Art of Analog Layout
Hastings A.
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The Art of Analog Layout
Alan Hastings
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Backgate Bias Accelerator for sub-100 ns Sleep-to-Active Modes Transition Time
Levacq; D.; Takamiya; M.; Sakurai; T
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Backgate-induced characteristics of ion-implanted GaAs MESFET's
Shih-Tsang Fu; Das; M.B
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The Art Of Analog Layout
Alan Hastings
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The Art of Analog Layout
Alan Hastings
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Racehoss
Albert Race Sample
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Threshold voltage theory for a short-channel MOSFET using a surface-potential distribution model
Y. Ōmura; K. Ohwada
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Threshold voltage of small-geometry Si MOSFETs
Thomas A. DeMassa; Ho Sheng Chien
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In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices
Naomi Mizuno; Fernando Camino; Xu Du
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An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers
Metzger; A.G.; Ramanathan; R.; Jiang Li; Hsiang-Chih Sun; Cismaru; C.; Hongxiao Shao; Rushing; L.; Weller; K.P.; Ce-Jun Wei; Yu Zhu; Klimashov; A.; Tkachenko; Y.A.; Bin Li; Zampardi; P.J
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A versatile 250/300-V IC process for analog and switching applications
Ludikhuize; A.W
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[IEEE 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - Nashville, TN, USA (6-9 Nov. 1988)] 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - Reduction of the backstage effect in GaAs MESFETS by charge confinement at the backgate electrode
Finchem; E.P.; Vetanen; W.A.; Odekirk; B.; Canfield; P.C
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Charging effects of ErAs islands embedded in AlGaAs heterostructures
A. Dorn; M. Peter; S. Kicin; T. Ihn; K. Ensslin; D. Driscoll; A.C. Gossard
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An experimental study of backgating effects in GaAs MESFETs
Saptharishi Sriram; Mukunda B. Das
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Local gating of a graphene Hall bar by graphene side gates
Molitor; F.; Güttinger; J.; Stampfer; C.; Graf; D.; Ihn; T.; Ensslin; K
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2-D simulation of kink-related sidegating effects in GaAs MESFETs
Kasuoki Usami; Kazushige Horio
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A Fully Integrated ADC in Organic Thin-Film Transistor Technology on Flexible Plastic Foil
Marien; H.; Steyaert; M.S.J.; van Veenendaal; E.; Heremans; P
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A Proof of Convergence of Gummel’s Algorithm for Realistic Device Geometries
Kerkhoven; Thomas
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[IEEE 2011 IEEE International SOI Conference - Tempe, AZ, USA (2011.10.3-2011.10.6)] IEEE 2011 International SOI Conference - TCAD study of back-gate biasing in UTBB
Hook; Terence B.; Furkay; Stephen; Kulkarni; Pranita; Monsieur; Frederic
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Correlation between the backgating effect of a GaAs MESFET and the compensation mechanism of a semi-insulating substrate
Ogawa; M.; Kamiya; T
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Observations of backgate impedance dispersion in GaAs isolation structures
Boroumand; F.A.; Swanson; J.G
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Origins and characterization of low-frequency noise in GaAs MESFET's grown on InP substrates
Chertouk; M.; Chovet; A
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High-responsivity optical FET's fabricated on a FET-SEED structure
Jiafu Luo; Grot; A.; Psaltis; D
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Local gating of decoupled graphene monolayers
T. Lüdtke; H. Schmidt; P. Barthold; R.J. Haug
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Low-dimensional devices fabricated by molecular beam epitaxy regrowth over patterned δ-doped backgates
M.L. Leadbeater; T.M. Burke; E.H. Linfield; N.K. Patel; D.A. Ritchie; M. Pepper
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Fully-Automated and Portable Design Methodology for Optimal Sizing of Energy-Efficient CMOS Voltage Rectifiers
Gosset; G.; Flandre; D
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Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
Chang-Hung Yu; Yu-Sheng Wu; Hu; V.P.-H.; Pin Su
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Backgating in GaAs devices and integrated circuits
L. G. Salmon
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Field effect and Coulomb blockade in silicon on insulator nanostructures fabricated by atomic force microscope
I. Ionica; L. Montès; S. Ferraton; J. Zimmermann; L. Saminadayar; V. Bouchiat
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MBE growth and patterned backgating of electron–hole bilayer structures
I. Farrer; A.F. Croxall; K. Das Gupta; C.A. Nicoll; H.E. Beere; M. Thangaraj; J. Waldie; D.A. Ritchie; M. Pepper
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A large-signal equivalent circuit model for substrate-induced drain-lag phenomena in HJFETs
Kunihiro; K.; Ohno; Y
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Infrared light-induced beating of Shubnikov–de Haas oscillations in MBE grown InAs/AlSb quantum wells
Yu.G. Sadofyev; A. Ramamoorthy; J.P. Bird; S.R. Johnson; Y.-H. Zhang
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The effect of backgating on the design and performance of GaAs digital integrated circuits
Birrittella; M.S.; Seelbach; W.C.; Goronkin; H
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Increased junction breakdown voltages in silicon-on-insulator diodes
Chen; H.-S.; Li; S.S.; Fox; R.M.; Krull; W.A
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Electrical and optical characterization of InAs quantum dots grown on ion implanted GaAs(100)
D. Reuter; P. Schafmeister; P. Kailuweit; C. Bock; U. Kunze; A. D. Wieck
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Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures
K Tsubaki; N Maeda; T Saitoh; T Nishida; N Kobayashi
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Fabrication and characterisation of Coulomb blockade devices in silicon
R. Augke; W. Eberhardt; S. Strähle; F.E. Prins; D.P. Kern
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Effect of backgate bias on the breakdown voltage of P-N junctions in SOI films
Zain O. Mohsen; S.C. Rustagi
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Threshold voltage models of short, narrow and small geometry MOSFET's: A review
L.A. Akers; J.J. Sanchez
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The Art of Analog Layout
Alan Hastings; Roy Alan Hastings
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The Art Of Analog Layout
Alan Hastings; Roy Alan Hastings
